Company Filing History:
Years Active: 2011
Title: The Innovative Contributions of Daniel Gagne
Introduction
Daniel Gagne is a notable inventor based in Biddeford, ME (US). He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance and efficiency of electronic devices.
Latest Patents
One of Daniel Gagne's key inventions is the polysilicon drift fuse. This invention features a polysilicon resistor fuse with an elongated bow-tie body that is wider at the opposite ends compared to a narrow central portion. The ends of the fuse body contain high concentrations of N-type dopants, which create low resistance contacts. The upper portion of the central body has a graded concentration of N-type dopants that decreases from the top surface toward the middle of the body. Additionally, the lower central portion is lightly doped with P-type dopants, while the central N-type region serves as a resistive area. This innovative design enhances the functionality of semiconductor devices.
Career Highlights
Daniel Gagne is currently employed at Fairchild Semiconductor Corporation, where he continues to work on advancing semiconductor technologies. His expertise and innovative mindset have made him a valuable asset to the company.
Collaborations
Throughout his career, Daniel has collaborated with talented individuals such as Nickole Gagne and Paul Fournier. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Daniel Gagne's contributions to the field of semiconductor technology, particularly through his invention of the polysilicon drift fuse, highlight his innovative spirit and dedication to advancing electronic solutions. His work continues to impact the industry positively.