Years Active: 2024-2025
Title: The Innovative Contributions of Daniel Feezell
Introduction
Daniel Feezell is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of materials science and engineering, particularly in the development of advanced devices. With a total of 2 patents, Feezell's work showcases his commitment to innovation and technological advancement.
Latest Patents
Among his latest patents, Feezell has developed devices comprising distributed Bragg reflectors and methods of making these devices. This method involves forming a buffer layer on a substrate, creating a periodically doped layer on the buffer layer, and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Additionally, he has patented rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips. This invention provides a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, along with methods for forming and using the tip.
Career Highlights
Throughout his career, Daniel Feezell has demonstrated a strong focus on innovation in materials and device fabrication. His patents reflect a deep understanding of the complexities involved in creating advanced technological solutions.
Collaborations
Feezell has collaborated with talented individuals such as Tito Busani and Mahmoud Behzadirad, contributing to the advancement of his research and inventions.
Conclusion
Daniel Feezell's innovative work and patents highlight his significant contributions to the field of materials science. His inventions not only advance technology but also pave the way for future developments in the industry.