North York, Canada

Daniel Chung


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2012

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Daniel Chung

Introduction

Daniel Chung is a notable inventor based in North York, Canada. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on enhancing the efficiency and functionality of on-chip capacitors.

Latest Patents

Daniel Chung holds a patent for "Under bump metallization for on-die capacitor." This patent involves various on-chip capacitors and methods of making the same. In one aspect, the method of manufacturing a capacitor includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. This structure overlaps at least a portion of the first conductor structure to provide a capacitor. He has 1 patent to his name.

Career Highlights

Daniel Chung is currently employed at ATI Technologies ULC, where he continues to innovate in the semiconductor industry. His work has contributed to advancements in capacitor technology, which are crucial for modern electronic devices.

Collaborations

Daniel has collaborated with notable colleagues such as Neil McLellan and Fei Guo. Their combined expertise has fostered a productive environment for innovation and development.

Conclusion

Daniel Chung's contributions to semiconductor technology, particularly in capacitor design, highlight his role as an influential inventor. His patent and collaborations reflect his commitment to advancing the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…