San Jose, CA, United States of America

Dania Ghantous


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 82(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Dania Ghantous

Introduction

Dania Ghantous is a notable inventor based in San Jose, California. She has made significant strides in the field of materials science, particularly in the development of high surface area metal oxynitrides. Her work is crucial for advancements in electrical energy storage technologies.

Latest Patents

Dania holds a patent for a method of producing high surface area metal oxynitrides. This invention focuses on creating substrates that can be used in capacitors or battery configurations. The patent specifically addresses the production of niobium, tantalum, vanadium, zirconium, titanium, and molybdenum oxynitrides, which are essential for enhancing energy storage capabilities.

Career Highlights

Dania is currently employed at Pinnacle Research Institute, Inc., where she continues to innovate in her field. Her work has garnered attention for its potential applications in energy storage solutions. With her expertise, she contributes to the ongoing research and development efforts at her organization.

Collaborations

Dania collaborates with esteemed colleagues, including Charles Z Deng and Keh Chi Tsai. These partnerships enhance her research and broaden the impact of her inventions.

Conclusion

Dania Ghantous exemplifies the spirit of innovation in the field of materials science. Her contributions to the development of high surface area metal oxynitrides are paving the way for more efficient energy storage solutions.

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