Company Filing History:
Years Active: 2013
Title: Daishiro Saito: Innovator in Semiconductor Technology
Introduction
Daishiro Saito is a prominent inventor based in Toyama, Japan. He is known for his contributions to semiconductor technology, particularly in the development of innovative devices that enhance performance and efficiency.
Latest Patents
Saito holds a patent for a semiconductor device and method for manufacturing a semiconductor device. This invention includes a second oxide film and a pad electrode on a first oxide film formed on the front surface of a semiconductor substrate. The device features a contact electrode and a first barrier layer within the second oxide film, connected to the pad electrode. Additionally, it incorporates a silicide portion that connects the contact electrode and the first barrier layer, along with a via hole extending from the back surface of the semiconductor substrate to the silicide portion and the second oxide film. A third oxide film is formed on the sidewall of the via hole and on the back surface of the semiconductor substrate, while a second barrier layer and a rewiring layer are formed inside the via hole and connected to the silicide portion.
Career Highlights
Daishiro Saito is currently employed at Panasonic Corporation, where he continues to push the boundaries of semiconductor technology. His work has significantly contributed to advancements in the field, making him a valuable asset to the company.
Collaborations
Saito collaborates with talented colleagues, including Takayuki Kai and Takafumi Okuma. Their combined expertise fosters an environment of innovation and creativity within their projects.
Conclusion
Daishiro Saito's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Panasonic Corporation highlight his commitment to advancing the field.