Hwaseong-si, South Korea

Dae-Sin Kim

USPTO Granted Patents = 6 

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Hwaseong-si, KR (2014 - 2017)
  • Yongin-si, KR (2015 - 2018)

Company Filing History:


Years Active: 2014-2018

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dae-Sin Kim

Introduction

Dae-Sin Kim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advancing semiconductor devices and their manufacturing processes.

Latest Patents

Among his latest patents, Dae-Sin Kim has developed semiconductor devices that include an air-gap and methods of manufacturing the same. This invention features a substrate with a trench formed within it, a plurality of gate structures, an isolation layer pattern, and an insulating interlayer pattern. The substrate is designed with multiple active regions defined by the trench, which are spaced apart in a second direction. Each active region extends in a first direction that is substantially perpendicular to the second direction. The gate structures consist of a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern, and a control gate, all sequentially stacked on the substrate. Notably, the isolation layer pattern is formed within the trench, with the first isolation layer pattern containing at least one air gap between the sidewalls of adjacent floating gates.

Another significant patent involves a semiconductor device featuring a buried channel array. This device includes field regions in a substrate that define active regions, along with gate trenches that contain active trenches and field trenches. The word lines fill the gate trenches and extend in a first direction, comprising active gate electrodes in the active trenches and field gate electrodes in the field trenches. Importantly, the bottom surface of each field gate electrode is positioned at a higher level than that of the active gate electrodes, which enhances the device's performance.

Career Highlights

Dae-Sin Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor innovation and contribute to the company's reputation for excellence in electronics.

Collaborations

Throughout his career, Dae-Sin Kim has collaborated with notable colleagues, including Sung-Hee Lee and Seung-Hwan Kim. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Dae-Sin Kim's contributions to semiconductor technology are noteworthy and reflect his dedication to innovation. His patents demonstrate a commitment to enhancing the functionality and efficiency of semiconductor devices. As a key figure

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