Littleton, CO, United States of America

Craig Marshall


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: The Innovations of Craig Marshall

Introduction

Craig Marshall is an accomplished inventor based in Littleton, Colorado. He has made significant contributions to the field of semiconductor materials and photovoltaic devices. His innovative work has led to the development of a unique system that characterizes these materials effectively.

Latest Patents

Craig Marshall holds a patent for a "System for characterizing semiconductor materials and photovoltaic." This invention encompasses a method and apparatus designed to measure various characteristics of semiconductor materials, including photovoltaic devices. The system is capable of measuring dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus consists of a light source, an integrating sphere, and a detector that communicates with a computer. The calibration process ensures accurate and absolute values by comparing measurements with a standard sample that has known characteristics.

Career Highlights

Craig is associated with the Midwest Research Institute, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the understanding and measurement of semiconductor materials, which are crucial for the development of efficient photovoltaic devices.

Collaborations

Craig has collaborated with notable colleagues, including Bhushan L Sopori and Larry C Allen. Their combined efforts have contributed to the advancement of research in the field of semiconductor materials.

Conclusion

Craig Marshall's innovative contributions to semiconductor characterization have paved the way for advancements in photovoltaic technology. His work continues to influence the industry and enhance the understanding of material properties.

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