Conrad J Koeneke

Title: The Innovations of Conrad J. Koeneke

Introduction

Conrad J. Koeneke is a notable inventor based in Fanwood, NJ (US), recognized for his contributions to the field of semiconductor technology. He holds 2 patents that focus on enhancing the performance of Schottky-barrier MOS and CMOS devices. His work has significantly impacted the efficiency and reliability of these devices in various applications.

Latest Patents

Koeneke's latest patents include advancements in Schottky-barrier MOS devices. These innovations involve selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, he employs either a one-step or a two-step ion implantation procedure for acceptor doping. In contrast, n-channel devices utilize a two-step procedure for donor doping. These methods enhance current injection into the channel while reducing leakage to the substrate, all while maintaining substantial immunity to parasitic bipolar transistor action in MOS devices and latchup in CMOS devices.

Career Highlights

Throughout his career, Koeneke has worked with prestigious organizations such as AT&T Bell Laboratories and American Telephone & Telegraph Co. His experience in these companies has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Koeneke has collaborated with notable colleagues, including Martin P. Lepselter and William T. Lynch. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Conrad J. Koeneke's contributions to semiconductor technology through his patents and collaborations have made a significant impact in the field. His work continues to influence the development of efficient and reliable electronic devices.