Company Filing History:
Years Active: 2014
Title: Comelia K Tsang: Innovator in Semiconductor Technology
Introduction
Comelia K Tsang is a prominent inventor based in Mohegan Lake, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of reliable copper through-silicon vias (TSVs). Her innovative work has led to the filing of a patent that addresses critical challenges in semiconductor manufacturing.
Latest Patents
Comelia holds a patent for an "Optimized annular copper TSV." This patent presents a thermo-mechanically reliable copper TSV and outlines a technique for forming such TSVs during back-end-of-line (BEOL) processing. The invention features an annular trench that extends through the semiconductor substrate, with sidewalls separated by a distance ranging from 5 to 10 microns. A conductive path made of copper or a copper alloy runs within the trench, connecting the upper surface of the first dielectric layer through the substrate, which can be 60 microns thick or less. Additionally, a dielectric layer with interconnect metallization is formed directly over the annular trench, enhancing the reliability and performance of semiconductor devices.
Career Highlights
Comelia K Tsang is associated with International Business Machines Corporation (IBM), where she has been instrumental in advancing semiconductor technologies. Her expertise in the field has positioned her as a key contributor to innovative solutions that address industry challenges.
Collaborations
Throughout her career, Comelia has collaborated with notable colleagues, including Paul Stephen Andry and Mukta G Rarooq. These collaborations have fostered a dynamic environment for innovation and have contributed to the success of her projects.
Conclusion
Comelia K Tsang's work in semiconductor technology exemplifies her commitment to innovation and excellence. Her patent for optimized annular copper TSVs showcases her ability to solve complex engineering problems, making her a valuable asset in the field.