Company Filing History:
Years Active: 2004
Title: Colombo R Bolognesi: Innovator in Semiconductor Technology
Introduction
Colombo R Bolognesi is a notable inventor based in Port Moody, Canada. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors. His innovative work has led to the creation of a unique patent that enhances the performance of heterojunction bipolar transistors.
Latest Patents
Colombo R Bolognesi holds a patent for a "Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain." This invention features an HBT with an InP collector, a GaAsSb base, and an InP emitter. The base is constructed using a thin layer of GaAsSb, which can be tailored to match the bulk lattice constant of the collector material. The thickness of the GaAsSb base layer is less than 49 nm, and preferably less than about 20 nm. This innovative design allows for a high base doping level, which reduces sheet resistivity and lowers base series resistance, enhancing the overall performance of the transistor.
Career Highlights
Colombo R Bolognesi is currently associated with Agilent Technologies, Inc., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing the capabilities of electronic devices through improved transistor technology.
Collaborations
Colombo has collaborated with Nicolas J Moll, contributing to the innovative projects at Agilent Technologies, Inc. Their partnership has fostered advancements in semiconductor technology.
Conclusion
Colombo R Bolognesi's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor. His work continues to influence the development of high-performance electronic devices.