Location History:
- Allston, MA (US) (1992)
- Bedford, MA (US) (1993 - 1994)
- Arlington, MA (US) (1994)
Company Filing History:
Years Active: 1992-1994
Title: Ciaran J. Brennan: Innovator in Ferroelectric Capacitor Technology
Introduction
Ciaran J. Brennan is a prominent inventor based in Bedford, MA, recognized for his significant contributions to the field of ferroelectric capacitor technology. With a total of seven patents to his name, Brennan has made remarkable advancements in memory device technologies that leverage the unique properties of ferroelectric materials.
Latest Patents
Among his most recent innovations are two patents focused on ferroelectric space charge capacitor memory devices. The first patent, titled "Self-biased ferroelectric space charge capacitor memory," involves a device that integrates a ferroelectric dielectric capable of exhibiting multiple polarization states. This technology employs a first electrode and a second electrode, creating differential internal bias voltages that define several capacitive levels. These levels correspond to different polarization states, enabling the production of an efficient electrical field that operates below the coercive electric field of the dielectric.
The second patent, titled "Ferroelectric space charge capacitor memory," outlines a similar device architecture that utilizes a pair of electrodes with a ferroelectric dielectric in between. This technology employs a coercive voltage supply to write the dielectric into various polarization states, establishing a space charge region that interacts with a neutral region to define capacitance. The innovation features a bias voltage supply and pulse generator, allowing for efficient determination of capacitance levels via a responsive current sensor.
Career Highlights
Brennan's professional journey includes notable positions at The Charles Stark Draper Laboratory, Inc., where he contributed to the development of advanced technological solutions in engineering and applied science. His expertise in ferroelectric memory devices has driven innovation and research in memory technology, contributing to the growth and capability of various electronic systems.
Collaborations
During his career, Ciaran J. Brennan has collaborated with various teams and professionals at The Charles Stark Draper Laboratory. These collaborations have led to significant advancements in the understanding and application of ferroelectric materials, enhancing the functionality of capacitor memory devices in modern electronic applications.
Conclusion
Ciaran J. Brennan’s innovative work in ferroelectric capacitor technology positions him as a key player in the electronics industry. With multiple patents that explore cutting-edge applications of ferroelectric materials, Brennan continues to influence the future of memory devices, demonstrating the vital role of inventors in technological advancement. His dedication to innovation has established a legacy that will benefit future research and development in the field.