Company Filing History:
Years Active: 2012
Title: Innovations of Chunhui Fan in Tunneling Field-Effect Transistors
Introduction
Chunhui Fan is a notable inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of tunneling field-effect transistors (TFETs). His innovative methods aim to enhance the efficiency and reliability of these devices.
Latest Patents
Chunhui Fan holds a patent for a "Method for fabricating a tunneling field-effect transistor." This invention discloses a self-aligned process for fabricating TFETs based on a planar approach. The method reduces the stringent requirements on photolithography processes, which are typically necessary for defining the source and drain regions of the TFET. By utilizing a different dielectric film that covers the active region, the alignment deviations that can occur during photolithography are minimized. This advancement facilitates the production of planar TFET devices with stable and reliable characteristics.
Career Highlights
Chunhui Fan is affiliated with Peking University, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its potential to improve the manufacturing processes of electronic devices.
Collaborations
Chunhui Fan has collaborated with notable colleagues, including Ru Huang and Yujie Ai, who contribute to his research endeavors. Their combined expertise enhances the innovative approaches taken in their projects.
Conclusion
Chunhui Fan's contributions to the field of tunneling field-effect transistors represent a significant advancement in semiconductor technology. His innovative methods not only simplify the fabrication process but also improve the performance of electronic devices.