Company Filing History:
Years Active: 2021
Title: **Chunghwan Yang: Innovator in Flash Memory Technology**
Introduction
Chunghwan Yang is a notable inventor based in Suwon-si, South Korea. He is recognized for his significant contributions to the field of memory technology, particularly in the realm of three-dimensional flash memory devices.
Latest Patents
Yang holds a patent titled **"Three-dimensional flash memory device including cell gate patterns having blocking barrier patterns and a method for manufacturing the same."** This innovative device features a substrate with multiple cell gate patterns and mold insulating layers that are alternately stacked. The design includes a vertical channel structure in contact with both the cell gate patterns and the mold insulating layers. Each cell gate pattern consists of a cell gate electrode and a blocking barrier pattern adjacent to it. The intricate design of the blocking barrier pattern contributes to the overall efficiency and functionality of the flash memory technology.
Career Highlights
Chunghwan Yang is currently employed at **Samsung Electronics Co., Ltd.**, a leading global electronics company known for its advancements in technology and innovations. His work at Samsung has positioned him at the forefront of emerging technologies within the semiconductor industry.
Collaborations
During his career, Yang has collaborated with talented professionals, including Joyoung Park and Taeyun Bae. These partnerships have allowed for the exchange of ideas and expertise, further enhancing the innovative processes within their projects.
Conclusion
Chunghwan Yang's contributions to three-dimensional flash memory technology reflect his dedication to innovation and development in the field. His patent serves as a testament to his ingenuity and the collaborative spirit within Samsung Electronics Co., Ltd. As technology continues to evolve, Yang’s work is poised to influence the future of memory devices significantly.