Chunfu Zhang

Title: Innovations of Chunfu Zhang in Field Effect Transistors

Introduction

Chunfu Zhang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of electronics, particularly in the development of advanced field effect transistors. His work focuses on addressing critical challenges in semiconductor technology.

Latest Patents

Chunfu Zhang holds a patent for a "Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof." This innovative transistor primarily solves the issue of the existing monolithic heterogeneous integrated cascode-structure field effect transistors lacking reverse blocking characteristics. The design includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a SiN isolation layer. An isolation groove is etched in the middle of the SiN isolation layer, allowing for the preparation of a Si metal oxide semiconductor field effect transistor on one side and a GaN high-electron-mobility transistor on the other side. This configuration enables the formation of a bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor.

Career Highlights

Chunfu Zhang is affiliated with Xidian University, where he continues to engage in research and development in the field of electronics. His work has garnered attention for its innovative approach to enhancing the performance of field effect transistors.

Collaborations

Chunfu Zhang collaborates with notable colleagues, including Weihang Zhang and Jiaqi Zhang. Their combined expertise contributes to advancing research in semiconductor technologies.

Conclusion

Chunfu Zhang's contributions to the field of field effect transistors exemplify the importance of innovation in electronics. His patented technology addresses significant challenges and paves the way for future advancements in semiconductor devices.