Company Filing History:
Years Active: 2024
Title: Innovations of Chun-Wei Tsao
Introduction
Chun-Wei Tsao is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory storage technology. With a total of 3 patents to his name, Tsao's work focuses on enhancing the efficiency and reliability of memory devices.
Latest Patents
Chun-Wei Tsao's latest patents include a read voltage control method, a memory storage device, and a memory control circuit unit. The read voltage control method provides a systematic approach for a rewritable non-volatile memory module. This method involves sending a first read command sequence to read multiple first memory cells using a first voltage level to obtain initial data. It then adjusts the read voltage based on the first data and channel parameters reflecting the status of the memory cells.
Another significant patent is the read voltage level correction method, which also includes a memory storage device and a memory control circuit unit. This method utilizes an initial read voltage level to perform data read operations, recording the relationship between different read voltage levels in a transient look-up table. This innovative approach enhances the accuracy of data retrieval in memory devices.
Career Highlights
Chun-Wei Tsao is currently employed at Phison Electronics Corporation, a leading company in the memory storage industry. His work at Phison has allowed him to develop cutting-edge technologies that improve memory performance and reliability.
Collaborations
Tsao collaborates with talented coworkers such as Shih-Jia Zeng and Wei Hung Lin. Their combined expertise contributes to the advancement of memory technology at Phison Electronics Corporation.
Conclusion
Chun-Wei Tsao's innovative contributions to memory storage technology demonstrate his commitment to enhancing device performance. His patents reflect a deep understanding of the complexities involved in memory systems. Through his work, Tsao continues to influence the future of memory technology.