Chun-Hsiao Li

Title: Innovations of Chun-Hsiao Li in Non-Volatile Memory Devices

Introduction

Chun-Hsiao Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory devices, holding two patents that showcase his innovative approach to technology.

Latest Patents

His latest patents include a method of fabricating a non-volatile memory device. This method involves the sequential formation of a tunneling dielectric layer and a first patterned conductive layer on a substrate. A patterned inter-gate dielectric layer and a second patterned conductive layer are then stacked on the first surface of the first patterned conductive layer, exposing its second surface. The substrate is covered by a passivation layer, with a recess formed on the first sidewall of the first patterned conductive layer, resulting in a sharp corner. Additionally, a non-volatile memory device is described, which includes a substrate, a gate stack, a selecting gate, an erasing gate, a source region, and a drain region. The gate stack comprises a tunneling dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a spacer. The design features a warp-around profile and sharp corners, enhancing the device's functionality.

Career Highlights

Chun-Hsiao Li is currently employed at Powerchip Technology Corporation, where he continues to develop innovative solutions in memory technology. His work has positioned him as a key figure in advancing non-volatile memory devices.

Collaborations

He collaborates with Cheng-Yuan Hsu, contributing to the development of cutting-edge technologies in their field.

Conclusion

Chun-Hsiao Li's contributions to non-volatile memory devices reflect his expertise and innovative spirit. His patents demonstrate a commitment to advancing technology in meaningful ways.