Company Filing History:
Years Active: 1988
Title: The Innovative Contributions of Chun Ho
Introduction
Chun Ho is a notable inventor based in Cupertino, California. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work focuses on enhancing the performance and reliability of electrically programmable memory devices.
Latest Patents
Chun Ho holds a patent for a method of making electrically programmable memory devices by doping. This invention addresses the issue of asperity in the floating gate of EPROM or EEPROM devices. The improved process involves fabricating ultrahigh coupling interpoly isolation dielectrics with a structure of oxide-nitride-oxide. By growing the first oxide on undoped LPCVD polycrystalline silicon, the invention reduces the grain boundary-oxidation enhancement effect at the interface of floating gate polysilicon and interpoly oxide. This advancement leads to a significantly higher breakdown capability of interpoly dielectrics. Consequently, it allows for the shrinkage of the interpoly electrical thickness beyond current limitations. The implanted dopants through interpoly oxide into the floating gate polysilicon also mitigate the oxidation enhanced diffusion from conventional POCl3 doped polysilicon into tunnel oxide, reducing phosphorus-induced traps in the tunnel oxide region. As a result, the EEPROM threshold window can remain open beyond 10^6 cycles.
Career Highlights
Chun Ho is currently employed at Exel Microelectronics, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
Chun Ho has collaborated with notable colleagues, including Thomas Tong Chang and Arun K Malhotra. These partnerships have contributed to the development of cutting-edge technologies in the field of microelectronics.
Conclusion
Chun Ho's contributions to the field of electrically programmable memory devices demonstrate his innovative spirit and commitment to advancing technology. His patent reflects a significant step forward in improving the performance and reliability of memory devices.