Location History:
- Berkeley Heights, NJ (US) (1977 - 1982)
- Warren, NJ (US) (1986)
Company Filing History:
Years Active: 1977-1986
Title: The Innovations of Chuan C Chang
Introduction
Chuan C Chang is a notable inventor based in Berkeley Heights, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has had a profound impact on the development of integrated circuits and MOSFET devices.
Latest Patents
One of his latest patents is focused on nitrided silicon dioxide layers for semiconductor integrated circuits. This innovation involves a nitrided silicon dioxide layer that is typically 50 to 400 Angstroms thick, located on a semiconductor medium. The nitrided layer is created by rapid heating in ammonia, resulting in a compound layer of silicon nitroxide on silicon dioxide. The atomic concentration fraction of nitrogen varies within the layer, providing unique properties beneficial for semiconductor applications. Another significant patent details a method for fabricating MOS field effect transistors (MOSFETs). This method includes forming source and drain contact electrodes before the growth of the gate oxide, allowing for improved device performance and efficiency.
Career Highlights
Chuan C Chang has worked with prestigious organizations such as Bell Telephone Laboratories and AT&T Bell Laboratories. His experience in these leading companies has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Throughout his career, Chang has collaborated with esteemed colleagues, including Dawon Kahng and Tan T Sheng. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Chuan C Chang's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor. His work continues to influence the field and pave the way for future innovations.