Ghent, Belgium

Christopher G M M Detavernier


Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 513(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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2 patents (USPTO):

Title: Innovator Christopher G M M Detavernier: Pioneering Advancements in CMOS Technology

Introduction

Christopher G M M Detavernier, based in Ghent, Belgium, has made significant contributions to the field of complementary metal oxide semiconductors (CMOS). With a total of two patents to his name, Detavernier is recognized for his innovative approach to integrating nanotechnology in electronic devices.

Latest Patents

Detavernier's latest patents include a groundbreaking invention centered around a self-aligned process for nanotube and nanowire field-effect transistors (FETs). This patent describes a CMOS device that features at least one one-dimensional nanostructure, typically a carbon-based nanomaterial, serving as the device channel. Additionally, it highlights the use of a metal carbide contact that is self-aligned with the gate region of the device. The present invention outlines a method for fabricating such a CMOS device, showcasing the potential for enhanced efficiency and performance in electronic applications.

Career Highlights

Currently, Detavernier is associated with International Business Machines Corporation (IBM), where he applies his expertise to the advancement of semiconductor technologies. His work within IBM is pivotal, as it contributes to the ongoing evolution of electronic components that leverage nanostructured materials.

Collaborations

Throughout his career, Detavernier has collaborated with notable colleagues such as Phaedon Avouris and Roy Arthur Carruthers. These collaborations have fostered an environment of innovation, enabling groundbreaking developments in nanotechnology and semiconductor manufacturing processes.

Conclusion

Christopher G M M Detavernier stands out as a prominent inventor in the realm of nanoscale electronic devices. His contributions, particularly in the self-aligned process for nanotube and nanowire FETs, are vital for the future of semiconductor technology. As he continues to work with esteemed professionals in the field and at a leading company like IBM, the potential for future innovations remains promising.

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