Christopher Detavernier

Title: Christopher Detavernier: Innovator in Semiconductor Technology

Introduction

Christopher Detavernier is a notable inventor based in Ossining, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of silicide formation on SiGe containing substrates. His innovative approach has led to advancements that benefit the semiconductor industry.

Latest Patents

Detavernier holds a patent for a method titled "Reduction of silicide formation temperature on SiGe containing substrates." This invention addresses the challenge of increased nucleation temperature during the formation of cobalt disilicides in the presence of germanium atoms. The method involves providing a structure with a cobalt layer that includes nickel as an additive element on top of a SiGe substrate. The process includes a self-aligned silicide process that consists of a first anneal, a selective etching step, and a second anneal to create a solid solution of (Co, Ni) disilicide on the substrate.

Career Highlights

Christopher Detavernier is associated with International Business Machines Corporation (IBM), where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's research but has also had a broader impact on the industry.

Collaborations

Detavernier has collaborated with notable colleagues such as Cyril Cabral, Jr. and Roy Arthur Carruthers. These collaborations have fostered innovation and have been essential in the development of his patented technologies.

Conclusion

Christopher Detavernier's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry and pave the way for future innovations.