Chih-Hsueh Hung

Title: Innovations of Chih-Hsueh Hung in Nonvolatile Memory Technology

Introduction

Chih-Hsueh Hung is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of nonvolatile memory technology, holding three patents that showcase his innovative approaches to memory device fabrication.

Latest Patents

One of his latest patents is focused on the manufacturing method and structure of a nonvolatile memory. This invention involves building a gate dielectric layer on a base, which contains at least two layers of different materials. By planting at least one hetero element on the top of the gate dielectric layer, the electronic trap density is increased, allowing for better electron capture. This innovation effectively extends storage time and addresses the issue of electron combination over extended operation periods.

Another significant patent by Hung is a fabrication method for forming a flash memory device with an adjustable sharp end structure of the L-shaped floating gate. This method utilizes a dielectric spacer to create the L-shaped floating gate, allowing for adjustments in the thickness of the polysilicon layer and the dielectric layer. This adjustment enhances the erasing control of the flash memory while ensuring a stable and easily controlled channel length.

Career Highlights

Chih-Hsueh Hung has worked with Megawin Technology Co., Ltd., where he has applied his expertise in memory technology. His work has contributed to advancements in the efficiency and functionality of memory devices.

Collaborations

Hung has collaborated with notable professionals in the field, including Erik S. Jeng and Wen-Ying Wen. These collaborations have further enriched his contributions to memory technology.

Conclusion

Chih-Hsueh Hung's innovative patents and career achievements highlight his significant role in advancing nonvolatile memory technology. His work continues to influence the development of more efficient memory devices in the industry.