Company Filing History:
Years Active: 2015-2016
Title: Innovations of Chi-Hsiang Lee
Introduction
Chi-Hsiang Lee is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench gate MOSFETs. With a total of four patents to his name, Lee's work has had a considerable impact on the industry.
Latest Patents
Chi-Hsiang Lee's latest patents include innovative designs for trench gate MOSFETs. One of his patents describes a trench gate MOSFET that features an epitaxial layer disposed on a substrate, with a body layer integrated within the epitaxial layer. This design includes a first trench in the epitaxial layer and a second trench in the body layer, with the first trench positioned below the second trench. The patent outlines the use of insulating layers and conductive layers to enhance the performance of the MOSFET. Another patent presents a similar trench gate MOSFET design, emphasizing the arrangement of conductive and insulating layers to optimize functionality.
Career Highlights
Chi-Hsiang Lee is currently employed at Ubiq Semiconductor Corp., where he continues to innovate in the semiconductor sector. His expertise in MOSFET technology has positioned him as a key player in the development of advanced semiconductor devices.
Collaborations
Lee collaborates with Chien-Ling Chan, a fellow innovator in the field. Their partnership has fostered advancements in semiconductor technology, contributing to the success of their projects.
Conclusion
Chi-Hsiang Lee's contributions to the field of semiconductor technology, particularly through his patents on trench gate MOSFETs, highlight his innovative spirit and dedication to advancing the industry. His work at Ubiq Semiconductor Corp. continues to influence the future of semiconductor devices.