Company Filing History:
Years Active: 2024-2025
Title: Chengxu Wang: Innovator in Phase-Change Memory Technology
Introduction
Chengxu Wang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of phase-change memory technology, holding 2 patents that showcase his innovative approach to electronic circuits.
Latest Patents
Wang's latest patents include a high-speed and large-current adjustable pulse circuit, as well as an operating circuit and method for phase-change memory. The high-speed and large-current adjustable pulse circuit features a clamping structure, a current mirror structure, and a leakage current shutdown structure. This design allows for the generation of a reference current and an output current that is proportional to it. The leakage current shutdown structure effectively reduces leakage current when the pulse disappears, resulting in a device with adjustable current and minimized leakage.
Additionally, Wang has developed a read and write circuit for three-dimensional phase-change memory. This circuit includes an operation control circuit and a read and write operation circuit that are interconnected. The operation control circuit is responsible for loading the correct operation pulse onto the read and write operation circuit. The read and write unit connects to a memory cell, ensuring that the correct operation pulse is applied to the memory cell and mirrored to a mirror current. A bandgap reference source and a hysteresis comparator are integrated into the design, along with a feedback chopper circuit loop that monitors the current flowing through the memory cell in real time.
Career Highlights
Chengxu Wang is affiliated with Huazhong University of Science and Technology, where he continues to advance research in memory technology. His work has garnered attention for its practical applications in improving electronic devices.
Collaborations
Wang collaborates with notable colleagues, including Xingsheng Wang and Fan Yang, contributing to a dynamic research environment that fosters innovation.
Conclusion
Chengxu Wang's contributions to phase-change memory technology highlight his role as a leading inventor in the field. His innovative patents reflect a commitment to enhancing electronic circuit design and functionality.