Company Filing History:
Years Active: 2014-2015
Title: Innovations of Inventor Chenfeng Zhang
Introduction
Chenfeng Zhang is a notable inventor based in San Jose, CA. He has made significant contributions to the field of non-volatile memory technology. With a total of 3 patents, his work focuses on enhancing the performance and reliability of memory devices.
Latest Patents
One of his latest patents is titled "Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory." This patent presents techniques for sensing memory cells in a 3D stacked non-volatile memory device. The approach reduces read disturb by adjusting read pass voltages based on variations in memory hole diameter. A larger read pass voltage is applied to memory cells adjacent to wider portions of the memory holes, while a smaller voltage is used for those near narrower portions. This method effectively minimizes the worst-case read disturb while maintaining overall resistance in the NAND string channel.
Another significant patent is "Erase operation with controlled select gate voltage for 3D non-volatile memory." This patent describes an erase process for a 3D stacked memory device that controls the drain-side select gate and source-side select gate of a NAND string. The process ensures a predictable drain-to-gate voltage across the select gates during the application of an erase voltage. This technique generates consistent gate-induced drain leakage, which is crucial for charging the body of the NAND string.
Career Highlights
Chenfeng Zhang is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory devices.
Collaborations
He collaborates with talented coworkers, including Haibo Li and Xiying Costa, who contribute to the innovative environment at Sandisk Technologies Inc.
Conclusion
In summary, Chenfeng Zhang is a prominent inventor whose work in non-volatile memory technology has led to significant advancements. His patents reflect a deep understanding of memory systems and a commitment to improving their performance and reliability.