Company Filing History:
Years Active: 2020
Title: Chen Shen - Innovator in Photosensitive Detection Technology
Introduction
Chen Shen is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of photosensitive detection technology. His innovative work has led to the development of a unique detection unit that enhances the capabilities of semiconductor devices.
Latest Patents
Chen Shen holds a patent for a "Dual-device photosensitive detection unit based on composite dielectric gate, detector and method thereof." This invention features a photosensitive detection unit that includes a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. Both portions are constructed above a common P-type semiconductor substrate and share a charge coupled layer. The design allows for multiple photosensitive detection units to be arranged in an array on the same substrate, forming a highly efficient detector. The adjacent unit pixels are isolated by deep trench isolation regions and P-type injection regions, ensuring optimal performance during detection.
Career Highlights
Chen Shen is affiliated with Nanjing University, where he continues to advance his research and development efforts. His work has garnered attention for its innovative approach to enhancing photosensitive detection capabilities in various applications.
Collaborations
Chen has collaborated with notable colleagues, including Haowen Ma and Feng Yan, who have contributed to his research endeavors.
Conclusion
Chen Shen's contributions to the field of photosensitive detection technology exemplify the spirit of innovation. His patented work not only showcases his expertise but also paves the way for future advancements in semiconductor technology.