Company Filing History:
Years Active: 2010
Title: Che-Kai Lin: Innovator in Transparent Gate Technology
Introduction
Che-Kai Lin is a prominent inventor based in Taipei, Taiwan. He is known for his contributions to the field of semiconductor technology, particularly in the development of multi-layer structures with transparent gates. His innovative work has the potential to enhance the sensitivity of high electron mobility transistors (HEMTs) to light waves.
Latest Patents
Che-Kai Lin holds a patent for a multi-layer structure with a transparent gate. This invention includes a MHEMT device structure that comprises a GaAs substrate, a Schottky layer, and a cap layer formed on the Schottky layer. The transparent gate is made of indium tin oxide (ITO) and is formed on the Schottky layer. Additionally, the structure features a drain and a source formed on the cap layer. The MHEMT device structure also includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer, all arranged in a stacked fashion between the GaAs substrate and the Schottky layer. This innovative multi-layer structure allows for a transparent gate HEMT that can significantly improve sensitivity to light waves.
Career Highlights
Che-Kai Lin is affiliated with Chang Gung University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
He has collaborated with notable colleagues, including Hsien-Chin Chiu and Liann-Be Chang, contributing to a dynamic research environment that fosters innovation.
Conclusion
Che-Kai Lin's contributions to the field of transparent gate technology exemplify the importance of innovation in semiconductor research. His patent for a multi-layer structure with a transparent gate represents a significant advancement that could lead to more sensitive electronic devices.