Company Filing History:
Years Active: 2021
Title: Chaochao Yan: Innovator in Graphene-Based Gallium Nitride Technology
Introduction
Chaochao Yan is a prominent inventor based in Shaanxi, China. He has made significant contributions to the field of materials science, particularly in the development of innovative processes for semiconductor technology. His work focuses on addressing the challenges associated with gallium nitride (GaN) films, which are crucial for various electronic applications.
Latest Patents
Chaochao Yan holds a patent for an "Epitaxial lift-off process of graphene-based gallium nitride." This invention presents a novel approach to the complex lift-off techniques that have traditionally plagued the production of GaN films. The process begins with the growth of graphene on polished copper foil using the chemical vapor deposition (CVD) method. Subsequently, multiple layers of graphene are transferred onto a sapphire substrate, followed by the growth of the GaN epitaxial layer using the metal organic chemical vapor deposition (MOCVD) method. The innovative aspect of this invention lies in its ability to relieve stress caused by lattice mismatch and facilitate the lifting off and transferring of the GaN epitaxial layer using weak Van der Waals forces.
Career Highlights
Chaochao Yan is affiliated with Xidian University, where he continues to advance his research in semiconductor materials. His work has garnered attention for its potential to reduce costs and improve the quality of GaN films, which are essential for high-performance electronic devices. With a total of 1 patent, Yan's contributions are paving the way for future innovations in the field.
Collaborations
Chaochao Yan collaborates with esteemed colleagues such as Jing Ning and Jincheng Zhang. Their combined expertise enhances the research and development efforts at Xidian University, fostering an environment of innovation and discovery.
Conclusion
Chaochao Yan's work in the epitaxial lift-off process of graphene-based gallium nitride represents a significant advancement in semiconductor technology. His innovative approach addresses critical challenges in the field, making a lasting impact on the industry.