Chao-Tsung Chang

Title: Chao-Tsung Chang: Innovator in Semiconductor Technology

Introduction

Chao-Tsung Chang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative devices that enhance the performance and efficiency of electronic components.

Latest Patents

One of Chao-Tsung Chang's latest patents is for a double-gate trench-type insulated-gate bipolar transistor device. This invention discloses a unique design featuring a first trench and a second trench located in a P-type doped well layer. These trenches are separated from each other and extend into a lightly-doped N-type drift layer. The device includes a heavily-doped P-type source region and a heavily-doped N-type source region, which are sequentially connected and positioned between the first and second trenches. This arrangement is designed to improve the overall functionality of the transistor device.

Career Highlights

Chao-Tsung Chang is currently employed at Huge Power Limited Taiwan Branch, where he continues to innovate in the semiconductor industry. His expertise and dedication to research have positioned him as a key player in the development of advanced electronic components.

Collaborations

Chao-Tsung Chang has collaborated with notable colleagues, including Jia-Ming Kuo and Chung-Wei Yu. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Chao-Tsung Chang's contributions to semiconductor technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of electronic devices and their potential to transform the industry.