Company Filing History:
Years Active: 2013-2014
Title: Innovations of Chao-Hsun Wang
Introduction
Chao-Hsun Wang is a notable inventor based in Zhongli, Taiwan. He has made significant contributions to the field of light-emitting devices, holding a total of 2 patents. His work focuses on enhancing the efficiency of light-emitting technologies, which are crucial in various applications.
Latest Patents
Wang's latest patents include a "Light Emitting Device with Graded Composition Hole Tunneling Layer." This invention features a substrate with an n-type semiconductor layer that includes a graded composition hole tunneling layer. This design improves the transport efficiency of holes, thereby increasing the light-emitting efficiency of the device. Another significant patent is the "Light Emitting Semiconductor Device," which comprises a substrate with multiple semiconductor layers and electrodes. This configuration allows for effective light emission by ensuring that the electric charge of the electrodes is opposite, optimizing the device's performance.
Career Highlights
Chao-Hsun Wang is affiliated with National Yang Ming Chiao Tung University, where he continues to advance his research in semiconductor technologies. His academic background and innovative work have positioned him as a key figure in the field of light-emitting devices.
Collaborations
Wang has collaborated with notable colleagues, including Hao-Chung Kuo and Zhen-Yu Li. These partnerships have fostered a collaborative environment that enhances research and development in their shared field of expertise.
Conclusion
Chao-Hsun Wang's contributions to light-emitting devices demonstrate his commitment to innovation and excellence in technology. His patents reflect a deep understanding of semiconductor materials and their applications, making him a valuable asset to the field.