Company Filing History:
Years Active: 2014
Title: **Chang Jun Yoon: Innovator in Nonvolatile Memory Technology**
Introduction
Chang Jun Yoon is an accomplished inventor hailing from Seoul, South Korea. He has made significant contributions to the field of electronics, particularly in the development of nonvolatile memory devices. With one patent to his name, Yoon has demonstrated his innovative spirit and technical expertise, setting a path for advancements in memory technology.
Latest Patents
The notable patent attributed to Chang Jun Yoon is titled "Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same." This patent outlines a groundbreaking electronic device that utilizes a semiconductor nanowire as a charge transport channel, supplemented by nanoparticles serving as a charge trapping layer. The design involves the adsorption of nanoparticles on a tunneling layer, allowing charge carriers to be tunneled to and from the nanoparticles, enabling the device to operate at lower voltage levels while enhancing operational speed, thereby pushing the boundaries of memory technology.
Career Highlights
Chang Jun Yoon is associated with Intellectual Discovery Co., Ltd., where he has been instrumental in pushing forward innovative projects and research in the field of electronic devices. His work focuses on integrating nanotechnology with electronic systems, paving the way for future developments that can leverage these advancements for practical applications.
Collaborations
Throughout his career, Yoon has collaborated with notable colleagues such as Sangsig Kim and Dong Young Jeong. These collaborations foster an environment of creativity and innovation, allowing for shared expertise and collective advancements in their field.
Conclusion
Chang Jun Yoon's contributions to nonvolatile memory technology highlight the importance of innovation in the electronics sector. His patent exemplifies how integrating nanotechnology can lead to more efficient and faster electronic devices. Yoon's work continues to pave the way for future innovations, making significant strides in how we understand and utilize memory technology in electronic applications.