Company Filing History:
Years Active: 2003
Title: Chang-hee Hyoung: Innovator in High Electron Mobility Transistor Technology
Introduction
Chang-hee Hyoung is a prominent inventor based in Daejon, South Korea. He is known for his significant contributions to the field of electronics, particularly in the development of advanced semiconductor devices. His innovative work has led to the creation of a unique power device that enhances the performance of high electron mobility transistors.
Latest Patents
Chang-hee Hyoung holds a patent for a pseudomorphic high electron mobility transistor (PHEMT) power device. This device is formed on a double planar doped epitaxial substrate and is capable of operating with a single voltage source. The patent outlines a method for manufacturing the PHEMT power device, which includes an epitaxial substrate with various layers such as a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, and an undoped GaAs cap layer. The design also features source and drain electrodes in ohmic contact with the undoped GaAs cap layer, along with a gate electrode extending through the cap layer.
Career Highlights
Chang-hee Hyoung is affiliated with the Electronics and Telecommunications Research Institute, where he has made significant strides in semiconductor technology. His work has not only advanced the field but has also contributed to the development of more efficient electronic devices.
Collaborations
He has collaborated with notable colleagues, including Haecheon Kim and Min Je Park, to further enhance the research and development of high-performance electronic components.
Conclusion
Chang-hee Hyoung's innovative contributions to the field of high electron mobility transistors exemplify the impact of dedicated research and collaboration in advancing technology. His work continues to influence the electronics industry and pave the way for future innovations.