Company Filing History:
Years Active: 1992-1993
Title: Chang F Wan - Innovator in Infrared Detector Technology
Introduction
Chang F Wan is a notable inventor based in Garland, TX (US), recognized for his contributions to the field of infrared detector technology. With a total of 2 patents to his name, he has made significant advancements that enhance the manufacturing processes of infrared detectors.
Latest Patents
His latest patents include a method for forming an infrared detector that utilizes a refractory metal within the metal-insulator-semiconductor (MIS) structure. This innovative process is designed for high-volume production of infrared focal plane array detectors. The use of tantalum as the gate material offers advantages over aluminum, particularly in its resistance to etching by bromine solutions. Furthermore, the etching process can be performed using a fluorine-containing plasma, which mitigates the corrosion issues associated with aluminum in chlorine-containing plasmas.
Career Highlights
Chang F Wan is currently employed at Texas Instruments Corporation, where he continues to develop cutting-edge technologies in the field of infrared detection. His work has been instrumental in improving the efficiency and reliability of infrared detectors, which are critical in various applications.
Collaborations
Throughout his career, Chang has collaborated with esteemed colleagues such as Rudy L York and Joseph D Luttmer. These partnerships have fostered an environment of innovation and have contributed to the successful development of his patented technologies.
Conclusion
Chang F Wan's contributions to infrared detector technology exemplify the impact of innovative thinking in engineering. His patents not only advance the field but also pave the way for future developments in infrared detection systems.