Catherine Mallet-Mouko

Title: Catherine Mallet-Mouko: Innovator in Photodiode Technology

Introduction

Catherine Mallet-Mouko is a distinguished inventor based in Boissy-Saint-Leger, France. She has made significant contributions to the field of photodiode technology, holding a total of 2 patents. Her work focuses on enhancing the performance of photodiodes, particularly in reducing leakage currents.

Latest Patents

Mallet-Mouko's latest patents include innovations in PIN photodiodes designed to minimize leakage current. One of her notable inventions features a substrate of indium phosphide (InP) that is n.sup.+ doped, with a layer of n.sup.- doped indium phosphide formed on its surface. This layer supports a MESA structure made of n.sup.- doped gallium indium arsenide (InGaAs). The design is characterized by a specific doping configuration that optimizes the device's performance, ensuring that the n.sup.- doping of the indium phosphide layer is lower than that of the gallium indium arsenide layer. Additionally, the invention includes a metallic contact on the substrate's second surface and an ohmic contact on a portion of the p.sup.+ layer.

Career Highlights

Catherine Mallet-Mouko is currently associated with U.S. Philips Corporation, where she continues to innovate in the field of semiconductor technology. Her expertise in photodiodes has positioned her as a key player in the industry, contributing to advancements that enhance the efficiency and reliability of optical devices.

Collaborations

Throughout her career, Mallet-Mouko has collaborated with notable colleagues, including Jean-Louis Gentner and Jean-Noel Patillon. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Catherine Mallet-Mouko's contributions to photodiode technology exemplify her commitment to innovation and excellence. Her patents reflect a deep understanding of semiconductor materials and their applications, making her a significant figure in the field.