Carey T Williams

Title: Carey T Williams - Innovator in Extreme Ultraviolet Lithography

Introduction

Carey T Williams is a notable inventor based in South Burlington, Vermont. He has made significant contributions to the field of extreme ultraviolet lithography (EUVL). His innovative work has led to the development of a unique mask structure that enhances the efficiency of EUV lithography processes.

Latest Patents

Williams holds a patent for an EUVL mask structure and method of formation. This invention involves a first conductive layer positioned between a buffer layer and an absorber layer, with the buffer layer resting on a multilayer stack. The multilayer stack is designed to reflect EUV radiation effectively. The absorber layer is engineered to absorb nearly all incident EUV radiation. A mask pattern is created in the absorber layer, which may inadvertently lead to defects that can be repaired. The process allows for the mask pattern to extend into the first conductive layer and buffer layer, ensuring a defect-free exposure of the multilayer stack. Additionally, a second conductive layer can be added on the absorber layer, where the mask pattern is also formed.

Career Highlights

Carey T Williams is currently employed at International Business Machines Corporation (IBM). His work at IBM has positioned him as a key player in advancing lithography technologies. His patent reflects his expertise and commitment to innovation in the semiconductor manufacturing industry.

Collaborations

Williams has collaborated with notable colleagues, including Emily E Fisch and Louis M Kindt. These collaborations have contributed to the development of cutting-edge technologies in the field.

Conclusion

Carey T Williams is a distinguished inventor whose work in extreme ultraviolet lithography has made a significant impact on the industry. His innovative patent showcases his expertise and dedication to advancing technology in semiconductor manufacturing.