Jiangsu, China

Can Zou


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Can Zou - Innovator in GaN HEMT Technology

Introduction

Can Zou is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN HEMT devices. His innovative work focuses on improving the detection of irradiation damage, which is crucial for various applications in electronics and materials science.

Latest Patents

Can Zou holds a patent for a GaN HEMT device designed for irradiation damage detection. This invention includes a substrate layer, a gallium nitride layer, a barrier layer, and a dielectric layer. A p-type gallium nitride layer is positioned on the barrier layer, with a drain and a source located on either side of the p-type layer. Additionally, a Schottky metal layer is placed on the p-type gallium nitride layer, while first and second ohmic metal layers are situated on the barrier layer. The second ohmic metal layer features interdigital inner and outer gear electrodes, enhancing the device's functionality. This patent showcases Can Zou's expertise and innovative approach to addressing complex challenges in semiconductor technology.

Career Highlights

Can Zou is affiliated with Nanjing University, where he continues to advance his research and development efforts. His work has garnered attention for its potential applications in various high-tech industries. With a focus on GaN technology, he is at the forefront of innovations that could lead to more efficient and reliable electronic devices.

Collaborations

Can Zou collaborates with esteemed colleagues such as Feng Zhou and Hai Lu. Their combined expertise contributes to the advancement of research in semiconductor technology and enhances the impact of their collective work.

Conclusion

Can Zou is a notable inventor whose contributions to GaN HEMT technology are paving the way for advancements in irradiation damage detection. His innovative patent and collaboration with fellow researchers highlight his commitment to pushing the boundaries of semiconductor technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…