Company Filing History:
Years Active: 1989
Title: C A Mazure-Espejo: Innovator in Semiconductor Technology
Introduction
C A Mazure-Espejo is a notable inventor based in Kirchseeon, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal-oxide-semiconductor (MOS) field effect transistors. His innovative work has implications for various electronic applications.
Latest Patents
Mazure-Espejo holds 1 patent for a metal-oxide-semiconductor (MOS) field effect transistor. This invention features monocrystalline, doped silicon zones that are strategically formed between gate electrodes and field oxide zones through selective epitaxy. These zones serve dual purposes as diffusion sources for the formation of source and drain zones in the substrate, as well as terminal zones for silicide source and drain terminals. The technology enables the creation of particularly planar structures with high integration density, characterized by reduced drain field strength, low series resistances, and minimized risk of substrate short circuits. The processes for forming this structure in CMOS circuits are straightforward and applicable to all NMOS, PMOS, and CMOS circuits.
Career Highlights
C A Mazure-Espejo is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to contribute to advancements in semiconductor technology, enhancing the performance and efficiency of electronic devices.
Collaborations
Mazure-Espejo has collaborated with fellow inventor Franz Neppl, working together to push the boundaries of semiconductor innovation.
Conclusion
C A Mazure-Espejo's contributions to semiconductor technology, particularly through his patented MOS field effect transistor, highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic systems.