Gyeryong-si, South Korea

Byoung-Jae Park

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 826(Granted Patents)


Location History:

  • Chungcheongnam-do, KR (2005)
  • Gyeryong-si, KR (2010 - 2011)

Company Filing History:


Years Active: 2005-2011

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3 patents (USPTO):Explore Patents

Title: Byoung-Jae Park: Innovator in Atomic Layer Deposition Technologies

Introduction

Byoung-Jae Park, an accomplished inventor based in Gyeryong-si, South Korea, has made significant contributions to the field of atomic layer deposition (ALD) with three notable patents to his name. His works focus on advancing deposition techniques that enhance the performance and reliability of semiconductor manufacturing processes.

Latest Patents

Among Byoung-Jae Park's latest innovations is the "Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same." This invention reveals an apparatus capable of converting an ion beam into a neutral beam, allowing for precise application on substrates. The method entails supplying a first reaction gas to create a non-chemisorbed material layer on the substrate and then employing a neutral beam to refine this layer by removing unwanted materials, ensuring minimal damage during the atomic layer deposition process.

Another significant patent is the "Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same." This invention focuses on uniformly depositing oxide layers in semiconductor substrates, dealing with issues such as seams and voids that can compromise the integrity of planarization layers. By utilizing neutral beams generated from a neutral beam generator, this technology improves the density and quality of the deposited oxide layers, facilitating advancements in high-density semiconductor applications.

Career Highlights

Throughout his career, Byoung-Jae Park has demonstrated relentless innovation in the semiconductor field. His association with prestigious institutions such as the Sungkyunkwan University Foundation for Corporate Collaboration and Sungkyunkwan University underscores his commitment to research and development. These establishments have provided him with a platform to explore and implement cutting-edge deposition technologies.

Collaborations

Byoung-Jae Park has collaborated with notable figures in the field, including Geun-Young Yeom and Do-Haing Lee. Their collective efforts have fostered a rich environment for technological advancements, contributing to the growth of novel applications in atomic layer deposition and semiconductor processing.

Conclusion

Byoung-Jae Park stands out as a pivotal inventor in the realm of atomic layer deposition technologies. His innovative patents not only push the boundaries of semiconductor manufacturing but also pave the way for the development of advanced materials and processes. As he continues to collaborate and innovate, Park's contributions are expected to have a lasting impact on the industry.

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