Company Filing History:
Years Active: 2019
Title: Byoung-don Kong: Innovator in Vacuum Transistor Technology
Introduction
Byoung-don Kong is a notable inventor based in Fairfax Station, Virginia. He has made significant contributions to the field of electronics, particularly in the development of advanced transistor technologies. His innovative work has led to the creation of a unique vacuum transistor structure that utilizes graphene, a material known for its exceptional electrical properties.
Latest Patents
Kong holds a patent for a "Vacuum transistor structure using graphene edge field emitter and screen electrode." This device features a substrate with a dielectric surface, a gate electrode, a drain electrode, and a source electrode that includes a conductive contact and a two-dimensional material edge. The design ensures that the source is adjacent to the gate, while the drain electrode is positioned such that it is not laterally between the edge and the gate electrode. Notably, the distance from the drain electrode to the edge exceeds that from the gate electrode to the edge, and the edge remains isolated from other components of the device. This innovative configuration allows for a clear line of sight or electron path from the edge to the drain electrode.
Career Highlights
Byoung-don Kong is currently associated with the United States Navy, where he contributes his expertise in electronic device innovation. His work is pivotal in advancing the capabilities of electronic systems, particularly in military applications.
Collaborations
Kong collaborates with esteemed colleagues, including Jonathan L. Shaw and John Bradley Boos. Their combined efforts in research and development have fostered advancements in the field of electronics.
Conclusion
Byoung-don Kong's contributions to vacuum transistor technology exemplify the innovative spirit of modern inventors. His work not only enhances electronic device performance but also paves the way for future advancements in the field.