Seongnam-si, South Korea

Byong-Sun Ju

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.4

ph-index = 1


Location History:

  • Seoul, KR (2003)
  • Seongnam-si, KR (2012)

Company Filing History:


Years Active: 2003-2012

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2 patents (USPTO):Explore Patents

Title: Byong-Sun Ju: Innovator in Nonvolatile Memory Technology

Introduction

Byong-Sun Ju is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 2 patents. His work has been instrumental in advancing memory technology, particularly in the design and manufacturing processes of these devices.

Latest Patents

Ju's latest patents include innovative designs for nonvolatile memory devices and methods of manufacturing them. One of his notable inventions involves a nonvolatile memory device that features a tunneling layer on a substrate, a floating gate, an inter-gate dielectric layer structure, and a control gate. This design enhances the performance and reliability of memory devices. Another patent focuses on a method for forming a gate electrode structure with an improved profile, which ensures stable operational characteristics by preventing profile degradation due to thermal expansion.

Career Highlights

Byong-Sun Ju is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His expertise and innovative approach have positioned him as a key player in the development of advanced memory solutions.

Collaborations

Ju has collaborated with notable colleagues, including Sung-Hae Lee and Suk-Jin Chung, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Byong-Sun Ju's contributions to nonvolatile memory technology exemplify the impact of dedicated inventors in the field. His patents reflect a commitment to advancing technology and improving device performance.

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