Location History:
- Atlanta, GA (US) (2021)
- Largo, FL (US) (2017 - 2024)
Company Filing History:
Years Active: 2017-2024
Title: **Innovations by Inventor Bryan Wiltzius**
Introduction
Bryan Wiltzius, located in Largo, FL, is an accomplished inventor known for his contributions to the field of construction materials, particularly plasterboards. With a total of eight patents to his name, his work has greatly influenced the industry through innovative designs and manufacturing methods.
Latest Patents
One of Bryan's notable patents involves advanced plasterboards and methods for making them. This particular innovation presents a plasterboard that consists of a layer of hardened plaster material with a first surface and an opposed second surface. Additionally, it features a layer of molded material with one or more raised features, providing unique functionalities. Another aspect of his patent describes an innovative method for forming plasterboards by loading an extruder with polymer material containing cementitiously-active substances, allowing for enhanced properties in the final product.
Career Highlights
Throughout his career, Bryan has worked with prominent companies such as Saint-Gobain Placo S.A.S and CertainTeed Gypsum, Inc. These experiences have allowed him to refine his skills in material science and cement manufacturing, directly contributing to his successes as an inventor.
Collaborations
During his professional journey, Bryan has collaborated with talented individuals such as Gerald Boydston and Choung-Houng Lai. These partnerships have played a crucial role in fostering creativity and innovation within his projects, driving forward advancements in plasterboard technology.
Conclusion
As an inventor, Bryan Wiltzius has made significant strides in the construction materials industry through his innovative plasterboard designs and manufacturing methods. His patents not only highlight his technical expertise but also demonstrate his dedication to improving building materials, making a lasting impact in the field.