Bryan L Preppernau

Title: Innovations of Bryan L Preppernau in Semiconductor Technology

Introduction

Bryan L Preppernau is a notable inventor based in Fairborn, OH (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of hydrogen plasma passivation of Gallium Arsenide (GaAs). His work has implications for improving the performance and reliability of III-V semiconductors.

Latest Patents

Bryan L Preppernau holds 1 patent related to his innovative work. His patent, titled "Hydrogen plasma passivation of GaAs," addresses the critical dependence of hydrogen plasma surface passivation on exposure time and pressure. The invention highlights the competition between plasma passivation and damage, emphasizing the importance of proper pressure control to achieve reproducible and stable passivation. Notably, improved passivation is achieved using high-pressure hydrogen plasmas, specifically above 1 Torr.

Career Highlights

Bryan L Preppernau has had a distinguished career at AT&T Bell Laboratories, where he has been involved in groundbreaking research and development in semiconductor technologies. His expertise in plasma passivation has positioned him as a key figure in advancing the understanding and application of III-V semiconductors.

Collaborations

Throughout his career, Bryan has collaborated with various professionals in the field, including his coworker Richard A Gottscho. Their joint efforts have contributed to the advancement of semiconductor technologies and have fostered innovation within their research environment.

Conclusion

Bryan L Preppernau's contributions to semiconductor technology through his innovative patent on hydrogen plasma passivation demonstrate his commitment to advancing the field. His work continues to influence the development of reliable and efficient semiconductor devices.