Company Filing History:
Years Active: 2021-2024
Title: Innovations of Bruce Edmund Freeman
Introduction
Bruce Edmund Freeman is a notable inventor based in Mountain House, California. He has made significant contributions to the field of vacuum technology, holding three patents to his name. His work primarily focuses on improving the efficiency and functionality of vacuum pump systems used in various processing chambers.
Latest Patents
One of Freeman's latest patents addresses the issue of deposition byproduct buildup in vacuum pump systems. This innovation is particularly relevant for processing chambers, such as plasma etch chambers, which perform both deposition and etch operations. The patent outlines a system that utilizes multiple roughing pumps to effectively divert etch gases and deposition precursors. By incorporating gas ejectors or venturi pumps at the outlet of a primary pump, the formation of deposition byproducts can be significantly reduced. Additionally, the patent discusses automated cleaning operations that utilize specific clean chemistries to remove these byproducts, enhancing the overall efficiency of the vacuum pump system.
Career Highlights
Freeman is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His role involves developing innovative solutions that improve the performance of vacuum systems in semiconductor manufacturing processes. His expertise in this area has made him a valuable asset to his team and the company.
Collaborations
Freeman has collaborated with several talented individuals in his field, including John Stephen Drewery and Tom A Kamp. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Bruce Edmund Freeman's contributions to vacuum technology demonstrate his commitment to innovation and excellence. His patents not only address critical challenges in the industry but also pave the way for future advancements in semiconductor manufacturing.