Blayne Tolleson

Title: Blayne Tolleson: Innovator in Bipolar Junction Transistor Modeling

Introduction

Blayne Tolleson is a notable inventor based in Tempe, AZ (US). He has made significant contributions to the field of electronics, particularly in the modeling of bipolar junction transistors (BJTs). His innovative approach has implications for the use of these devices in space systems.

Latest Patents

Blayne Tolleson holds a patent for a method titled "Method for modeling excess current in irradiated bipolar junction transistors." This patent describes a technique for quantifying defect-related electrostatic effects in BJTs. The method aims to improve the accuracy of predicting excess base current in irradiated BJTs. By adapting this method, it is possible to model the excess base current of lateral P-type-N-type-P-type (LPNP) BJTs in various surface potential states. The predicted excess base current can be crucial for qualifying BJTs for use in space systems as commercial-off-the-shelf (COTS) components. This innovation enables faster and more cost-effective qualification processes for these components.

Career Highlights

Throughout his career, Blayne Tolleson has worked with prestigious institutions such as Arizona State University and the California Institute of Technology. His work has focused on enhancing the reliability and performance of electronic devices in challenging environments.

Collaborations

Blayne has collaborated with notable professionals in his field, including Hugh Barnaby and Philippe C Adell. These collaborations have contributed to the advancement of research and development in transistor technology.

Conclusion

Blayne Tolleson's contributions to the modeling of bipolar junction transistors have paved the way for advancements in electronic device reliability, particularly in space applications. His innovative methods and collaborations continue to influence the field positively.