Bingwen Liang

Title: Bingwen Liang: Innovator in Gallium Nitride Technology

Introduction

Bingwen Liang is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of optoelectronics, particularly in the development of gallium nitride (GaN) light emitting diodes (LEDs). With a total of 2 patents, his work has advanced the technology used in modern lighting solutions.

Latest Patents

Liang's latest patents focus on innovative window structures for gallium nitride-based LEDs. The first patent describes a window structure that includes a magnesium-doped p window layer of a GaN compound, a thin, semi-transparent metal contact layer, and an amorphous current spreading layer. The contact layer is formed of NiO/Au, while the current spreading layer is made of Indium Tin Oxide. The p electrode of the diode features a titanium adhesion layer that creates an ohmic connection with the current spreading layer and a Schottky diode connection with the magnesium-doped window layer. The second patent outlines a similar method of forming a window for a gallium nitride light emitting diode, emphasizing the same structural components and their functions.

Career Highlights

Throughout his career, Bingwen Liang has worked with Dalian Lumei Optoelectronics Corporation, where he has applied his expertise in optoelectronic devices. His innovative approaches have contributed to advancements in LED technology, making him a key figure in the industry.

Collaborations

Liang has collaborated with notable professionals in the field, including Robert Shih and John Chen. Their combined efforts have fostered innovation and development in gallium nitride technologies.

Conclusion

Bingwen Liang's contributions to gallium nitride technology and his innovative patents have positioned him as a significant inventor in the optoelectronics field. His work continues to influence the development of advanced lighting solutions.