Company Filing History:
1 out of 1,506 
1 out of 4 Years Active: 1996
Title: The Innovations of Basab Chatterjee
Introduction
Basab Chatterjee is a notable inventor based in Columbus, OH (US). He has made significant contributions to the field of photovoltaic devices, particularly through his innovative patent related to hydrogen passivated heteroepitaxial III-V photovoltaic devices.
Latest Patents
Chatterjee holds a patent for a hydrogen passivated photovoltaic device, which includes a lattice mismatched substrate such as Ge or Si, and a hydrogen passivated heteroepitaxial layer like InP grown on the substrate. This device is produced by exposing a sample of heteroepitaxial III-V material to reactive hydrogen species at elevated temperatures. The process allows reactive hydrogen to form bonds with dangling bonds along dislocations in the sample, effectively passivating the electrical activity in these dislocations.
Career Highlights
Throughout his career, Basab Chatterjee has worked with esteemed organizations, including The Ohio State University Research Foundation and Essential Research, Inc. His work has focused on advancing the technology behind photovoltaic devices, contributing to the development of more efficient solar energy solutions.
Collaborations
Chatterjee has collaborated with notable colleagues such as Steven A. Ringel and Richard W. Hoffman, further enhancing the impact of his research and innovations in the field.
Conclusion
Basab Chatterjee's contributions to the field of photovoltaic technology through his innovative patent demonstrate his commitment to advancing renewable energy solutions. His work continues to influence the development of efficient solar energy technologies.