Babar A Kanh

Title: Babar A Kanh: Innovator in Sub-Lithography Gate Lengths

Introduction

Babar A Kanh is a notable inventor based in Ossining, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of gate length formation.

Latest Patents

Babar A Kanh holds a patent for a method titled "Wet etch reduction of gate widths." This innovative technique involves patterning a layer of resist above a gate stack, which includes a gate layer, hardmask layer, and etch-control layer. The process allows for the creation of sublithography gate lengths by etching the hardmask layer and using a blocking mask to protect the desired gate length. The remaining hardmask is then wet-etched to reduce its dimensions, enabling the production of different gate lengths in various areas of the circuit.

Career Highlights

Babar A Kanh is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has positioned him as a key player in advancing semiconductor manufacturing techniques.

Collaborations

Throughout his career, Babar has collaborated with talented individuals such as Naim Moumen and Wesley Charles Natzle. These collaborations have further enriched his contributions to the field.

Conclusion

Babar A Kanh's innovative work in the semiconductor industry, particularly with his patent on gate length formation, showcases his expertise and commitment to advancing technology. His contributions continue to influence the field and inspire future innovations.