Company Filing History:
Years Active: 1992
Title: B Eugene Hammons: Innovator in Reflection Mass Spectrometry
Introduction
B Eugene Hammons is a notable inventor based in Tijeras, NM (US). He has made significant contributions to the field of semiconductor technology through his innovative patent. His work focuses on enhancing the precision of molecular beam epitaxial growth, which is crucial for advanced semiconductor devices.
Latest Patents
Hammons holds a patent for a "Reflection mass spectrometry technique for monitoring and controlling." This method allows for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers. The technique incorporates reflection mass spectrometry, which is responsive to intentional perturbations in molecular fluxes incident on a substrate. By accurately measuring the molecular fluxes reflected from the substrate, this method enables precise control of newly forming surfaces that are dynamically changing as a result of growth. Hammons has 1 patent to his name.
Career Highlights
Throughout his career, Hammons has been dedicated to advancing semiconductor technology. His innovative approaches have paved the way for improved manufacturing processes in the semiconductor industry. His work is recognized for its impact on the efficiency and effectiveness of molecular beam epitaxy.
Collaborations
Hammons has collaborated with esteemed colleagues such as Thomas M Brennan and Jeffrey Y Tsao. These partnerships have contributed to the development and refinement of his patented techniques.
Conclusion
B Eugene Hammons is a distinguished inventor whose work in reflection mass spectrometry has significantly advanced the field of semiconductor technology. His innovative methods continue to influence the industry and enhance the precision of semiconductor manufacturing processes.