Austin Hickman

Title: Austin Hickman: Innovator in High Electron Mobility Transistors

Introduction

Austin Hickman is a notable inventor based in Ithaca, NY (US). He has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Austin Hickman holds a patent for "RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages." This patent describes a High Electron Mobility Transistor (HEMT) device that features an AlN buffer layer on a substrate and an epi-GaN channel layer on the AlN buffer layer. The design includes an AlN barrier layer on the Epi-GaN channel layer, providing a channel region in the epi-GaN channel layer. Additionally, a GaN drain region is recessed into the epi-GaN channel layer at one end of the channel region, while a GaN source region is recessed at the opposite end. The gate electrode is designed with a neck portion that extends above the AlN barrier layer, leading to a head portion with a greater width.

Career Highlights

Austin Hickman is affiliated with Cornell University, where he continues to engage in research and development in the field of electronics. His work has been instrumental in pushing the boundaries of technology, particularly in the area of high-frequency applications.

Collaborations

Austin has collaborated with notable colleagues, including Reet Chaudhuri and Samuel James Bader. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.

Conclusion

Austin Hickman's contributions to the field of high electron mobility transistors exemplify his commitment to advancing technology. His innovative patent and collaborative efforts at Cornell University highlight his role as a key figure in the electronics industry.