Location History:
- Takatsuki, JP (2003)
- Osaka, JP (1998 - 2009)
Company Filing History:
5 out of 27,375 
2 out of 655 
1 out of 16,453 
Years Active: 1998-2009
Title: **Atsushi Noma: Innovator in Ferroelectric Memory Technology**
Introduction
Atsushi Noma, based in Osaka, Japan, is an accomplished inventor known for his significant contributions to the field of ferroelectric memory technology. With a remarkable portfolio of eight patents, Noma has played a vital role in advancing semiconductor memory devices, showcasing his innovative spirit and technical expertise.
Latest Patents
Noma's latest patents include groundbreaking inventions that enhance the performance and reliability of semiconductor memory devices. One such patent is the "Ferroelectric device having a contact for taking the potential of a metal film and a plurality of capacitors positioned periodically." This invention describes a semiconductor memory device featuring multiple layers, including conductive layers, insulating films, and capacitors, all meticulously designed to improve functionality.
Another notable patent is the "Reliability test method for a ferroelectric memory device." This method evaluates the long-term reliability of ferroelectric memory devices under various acceleration conditions. By analyzing the temperature dependence of bit line voltage over time, this innovation ensures that the retention characteristics of the memory device are maintained even under actual usage scenarios.
Career Highlights
Throughout his career, Atsushi Noma has made impactful contributions while working at prominent companies such as Matsushita Electric Industrial Co., Ltd. and Matsushita Electronics Corporation. His engineering prowess and inventive approach have solidified his reputation as a leading figure in the development of advanced memory solutions.
Collaborations
During his professional journey, Noma has collaborated with talented individuals like Daisuke Ueda and Hidetoshi Ishida. These partnerships have fostered a productive environment for innovation, resulting in numerous technological advancements that have influenced the memory device industry.
Conclusion
Atsushi Noma exemplifies the spirit of innovation in the realm of semiconductor technologies. His contributions not only enhance the efficiency and reliability of ferroelectric memory devices but also inspire future generations of inventors to pursue groundbreaking advancements in technology.