Atsuko Kumagai

Title: Atsuko Kumagai: Innovator in Amorphous Silicon Photosensors

Introduction

Atsuko Kumagai is a notable inventor based in Sendai, Japan. She has made significant contributions to the field of photosensor technology, particularly with her innovative designs that enhance image sensing capabilities.

Latest Patents

Kumagai holds a patent for an "Amorphous silicon photosensor with oxygen doped layer." This invention features a sandwich-type amorphous silicon photosensor that is particularly suitable for use as an image sensor in facsimile machines. The design includes a pair of first and second electrodes, with an amorphous silicon multi-layer structure sandwiched between them. The first electrode is made of an oxide and boasts a transparency of 80% or more in the visible light region. The multi-layer structure contains a first amorphous silicon layer that is in contact with the first electrode, which includes oxygen and has an optical bandgap of 2.0 eV or more, a resistivity ranging from 10^12 to 10^14 ohms-cm, photoconductive characteristics, and a refractive index between 1.8 and 3.4.

Career Highlights

Throughout her career, Kumagai has worked with prominent companies such as Ricoh Company, Ltd. and Ricoh Research Institute of General Electronics. Her work has been instrumental in advancing the technology used in imaging devices.

Collaborations

Kumagai has collaborated with notable colleagues, including Kenji Yamamoto and Koichi Haga, contributing to various projects that have furthered the development of photosensor technology.

Conclusion

Atsuko Kumagai's innovative work in the field of amorphous silicon photosensors has made a lasting impact on imaging technology. Her contributions continue to influence advancements in this area, showcasing her role as a leading inventor.